Search conversion epc

Advanced search
42 results
Order by date - Order by pertinence
All (42)
Press (42)
 
Efficient Power Conversion (EPC) Introduces Buck Power Conversion Demonstration Board Featuring (eGaN®) FETs
EPC9101 demonstrates size reduction and efficiency enhancement for buck power conversion achieved using high frequency switching eGaN power transistors.
Press published on the October 20th, 2011 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs
EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board and well-documented engineering support materials..
Press published on the August 16th, 2011 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs
EPC9003 Facilitates Rapid Design of High Frequency Switching Power Conversion Systems Based upon the 200 V EPC2010 with Ready-Made, Easy to Connect Development Board and Well-Documented Engineering Support Materials.
Press published on the June 1st, 2011 - 2:00 AM ET
Efficient Power Conversion (EPC) Opens GaN Power Library
Designers using state-of-the-art GaN transistors for power conversion can for the first time go to one place to find a concentration of articles, videos, and textbooks that reduce the time it takes to get their products to ...
Press published on the May 22nd, 2013 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces Development Board Featuring 100 V Enhancement Mode Gallium Nitride (eGaN®) FETs
EPC9010 development board features dedicated eGaN driver to facilitate rapid design of high frequency switching power conversion systems using the 100 V EPC2016 eGaN FET.
Press published on the March 15th, 2013 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces EPC9006 Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs
EPC9006 facilitates rapid design of high frequency switching power conversion systems based on the 100 V EPC2007 with a ready-made and easy-to-connect development board including well-documented engineering support materials.
Press published on the September 12th, 2011 - 2:00 AM ET
Efficient Power Conversion (EPC) Announces a WiTricity™ Demonstration System Featuring High Frequency Gallium Nitride (eGaN®) FETs
Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer.
Press published on the August 13th, 2012 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces Development Board for Systems Using Enhancement Mode Gallium Nitride (eGaN®) FETs
EPC9005 facilitates rapid design of high frequency switching power conversion systems based on the 40 V EPC2014 with a ready-made and easy-to-connect development board including well-documented engineering support materials.
Press published on the August 29th, 2011 - 2:00 AM ET
Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics and Exposition Conference (APEC®)
EPC CEO and applications experts will conduct a half-day seminar and technical presentations on GaN FET technology and applications at the IEEE APEC 2013 power electronics industry conference.
Press published on the February 26th, 2013 - 3:00 AM ET
Dr. David Reusch Joins Efficient Power Conversion (EPC) as Director Applications Engineering
Dr. Reusch will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems.
Press published on the May 21st, 2012 - 2:00 AM ET
Efficient Power Conversion (EPC) Announces Upgrade of Development Boards Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs Using Dedicated GaN FET Gate Drivers from Texas Instruments
EPC9003 and EPC9006 demonstrate the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials.
Press published on the October 9th, 2012 - 2:00 AM ET
Efficient Power Conversion (EPC) Announces Upgrade of Development Board Featuring Enhancement Mode Gallium Nitride (eGaN®) FETs Using Dedicated GaN FET Gate Driver from Texas Instruments
EPC9005 demonstrates the ease of designing with eGaN FETs with ready-made, easy to connect development boards and well-documented engineering support materials.
Press published on the April 9th, 2013 - 2:00 AM ET
Efficient Power Conversion (EPC) Introduces Eighth Brick DC-DC Power Converter Demonstration Board Featuring (eGaN®) FETs
EPC9102 showcases the performance that can be achieved using the EPC2001 eGaN FETs and the LM5113 eGaN FET driver from Texas Instruments.
Press published on the May 24th, 2012 - 2:00 AM ET
Efficient Power Conversion (EPC) eGaN® FETs Offer Superior Safe Operating Area Capabilities
eGaN FETs Exhibit a Positive Temperature Coefficient Across Their Entire Operating Range, Thus Overcoming a Performance Limitation of the Silicon MOSFET..
Press published on the September 4th, 2012 - 2:00 AM ET